700V N-Channel Super Junction MOSFET
Description
HCD70R350E Super Junction MOSFET
Sep 2016
HCD70R350E
700V N-Channel Super Junction MOSFET
Features
Very Low FOM (RDS(on) X Qg) Extremely low switching loss Excellent stability and uniformity 100% Avalanche Tested Higher dv/dt ruggedness
Application
Lighting Hard Switching PWM Server Power Supply Charger
Key Parameters
Parameter BVDSS @Tj,max
ID RDS(on), max
Qg, Typ
Value 750 12 0.
35 16
Unit V A ȍ nC
Package & Internal Circuit
TO-252
D
S G
Absolute Maximum Ratings TC=25 unless otherwise specified
Symbol
Parameter
Value
VDSS VGS
ID
IDM EAS dv/dt dv/dt PD TJ, TSTG
TL
Drain-Source Voltage
Gate-Source Voltage
Drain Current Drain Current Drain Current
– Continuous (TC = 25)
– Continuous (TC = 100)
– Pulsed
(Note 1)
Single Pulsed Avalanche Energy
(Note 2)
MOSFET dv/dt ruggedness, VDS=0…480V Reverse diode dv/dt, VDS=0…480V, IDSID Power Dissipation (TC = 25) Operating and Storage Temperature Range
Maximum lead temperatu...
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