N-Channel Power MOSFET
Description
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.
, LTD
SOT-523 Plastic-Encapsulate MOSFETS
CJE3134K N-Channel MOSFET
V(BR)DSS
20V
RDS(on)MAX
380 mΩ@4.
5V 450 mΩ@2.
5V 800 mΩ@1.
8V
FEATURE z High-Side Switching z Low On-Resistance z Low Threshold z Fast Switching Speed
MARKING
ID
0.
75A
SOT-523
1.
GATE 2.
SOURCE 3.
DRAIN
APPLICATION z Drivers:Relays, Solenoids, Lamps, Hammers, Displays, Memories z Battery Operated Systems z Power Supply Converter Circuits z Load/Power Switching Cell Phones, Pagers
Equivalent Circuit
Maximum ratings (Ta=25℃ unless otherwise noted)
Parameter Drain-Source voltage
Typical Gate-Source Voltage Drain Current-Continuous Drain Current -Pulsed(note1) Power Dissipation (note 2) Thermal Resistance from Junction to Ambient Storage Temperature Junction Temperature
Symbol VDSS VGS ID IDM PD RθJA Tj Tstg
www.
cj-elec.
com
1
Value 20 ±12 0.
75 3 150 833 150 -55 ~+150
Unit V
A mW ℃/W ℃
A,Dec,2015
MOSFET ELECTRICAL CHARACTERISTICS
Ta=25 ℃ unless othe...
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