PNP power transistors
Description
DISCRETE SEMICONDUCTORS
DATA SHEET
M3D067
BD826; BD828; BD830 PNP power transistors
Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04
1997 Jun 23
Philips Semiconductors
PNP power transistors
Product specification
BD826; BD828; BD830
FEATURES • High current (max.
1 A) • Low voltage (max.
80 V).
APPLICATIONS • General purpose • Driver stages in hi-fi amplifiers and television circuits.
DESCRIPTION PNP power transistor in a TO-202; SOT128B plastic package.
NPN complements: BD825 and BD829.
PINNING PIN 1 2 3
handbook, halfpage
DESCRIPTION emitter collector, connected to metal part of mounting surface base
2 3
1
12 3
MAM304
Fig.
1 Simplified outline (TO-202; SOT128B) and symbol.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
VCBO
collector-base voltage BD826
BD828
BD830
VCEO
collector-emitter voltage BD826
BD828
BD830
ICM peak collector current Ptot total power dissipation
hFE DC current gain fT transition frequency
CON...
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