32M x 16 bit Synchronous DRAM
Description
EtronTech
EM63B165TS
32M x 16 bit Synchronous DRAM (SDRAM)
Advance (Rev.
2.
0, Feb.
/2016)
Features
Fast access time from clock: 4.
5/5/5.
4 ns Fast clock rate: 200/166/143 MHz Fully synchronous operation Internal pipelined architecture 8M word x 16-bit x 4-bank Programmable Mode registers
- CAS Latency: 2 or 3 - Burst Length: 1, 2, 4, 8, or full page - Burst Type: Sequential or Interleaved - Burst stop function Auto Refresh and Self Refresh 8192 refresh cycles/64ms CKE power down mode Single +3.
3V ±0.
3V power supply Operating Temperature: TA = 0~70°C Interface: LVTTL 54-pin 400 mil plastic TSOP II package - Pb free and Halogen free
Overview
The EM63B165 SDRAM is a high-speed CMOS synchronous DRAM containing 512 Mbits.
It is internally configured as 4 Banks of 8M word x 16 DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK).
Read and write accesses to the SDRAM are burst orie...
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