4M x 16 bit Synchronous DRAM
Description
EtronTech
EM638165
4M x 16 bit Synchronous DRAM (SDRAM)
Preliminary (Rev.
5.
3, Dec.
/2013)
Features
Overview
• Fast access time from clock: 4.
5/5.
4/5.
4 ns • Fast clock rate: 200/166/143 MHz • Fully synchronous operation • Internal pipelined architecture • 1M word x 16-bit x 4-bank • Programmable Mode registers
- CAS Latency: 2 or 3
- Burst Length: 1, 2, 4, 8, or full page
- Burst Type: Sequential or Interleaved
- Burst stop function
- Optional drive strength control
• Auto Refresh and Self Refresh • 4096 refresh cycles/64ms • CKE power down mode • Single +3.
3V ± 0.
3V power supply • Operating Temperature: TA = 0~70°C • Interface: LVTTL • 54-pin 400 mil plastic TSOP II package
- Pb and Halogen Free
• 54-ball 8.
0 x 8.
0 x 1.
2mm (max) FBGA package - Pb free and Halogen free
The EM638165 SDRAM is a high-speed CMOS synchronous DRAM containing 64 Mbits.
It is internally configured as 4 Banks of 1M word x 16 DRAM with a synchronous interface (all signals are ...
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