20GHz Low Noise FET
Description
RF Low Noise FET
CE3521M4
20 GHz LoEwnteNr oa iSsheorFtEDTociunmDenuta/TlitMleoNladmPe lHaesrteic PKG
DESCRIPTION
Low Noise and High Gain Original Dual Mold Plastic package
FEATURES
Low noise figure and high associated gain: NF = 0.
70 dB TYP.
, Ga = 11.
9 dB TYP.
@VDS = 2 V, ID = 10 mA, f = 20 GHz
PACKAGE
Flat-lead 4-pin thin-type super minimold package
APPLICATIONS
DBS LNB gain-stage, Mix-stage Low noise amplifier for microwave
communication systems
ORDERING INFORMATION
Part Number
Order Number
CE3521M4
CE3521M4-C2
Package
Flat-lead 4-pin thin-type super minimold package
Marking
C04
Description
• Embossed tape 8 mm wide • Pin 1 (source), Pin 2 (drain)
face the perforation side of
the tape • MOQ 15 kpcs/reel
This document is subject to change without notice.
Date Published: July 2016 CDS-0020-04 (Issue A)
1
PIN CONFIGURATION AND INTERNAL BLOCK DIAGRAM
Pin No.
1 2 3 4
Pin Name
Source Drain Source Gate
CE3521M4
ABSOLUTE MAXIMUM RATINGS
(TA = +25˚C, unless otherwise specified)
Parameter
Symbol
Rating
Drain to Source Voltage Gate to Source Voltage
VDS 4.
0 VGS -3.
0
Drain Current Gate Current
ID IDSS IG 80
Total Power Dissipation Channel Temperature
Ptot 125 Tch +150
Storage Temperature
Tstg -55 to +125
Operation Temperature
Top -55 to +125Note
Note Refer to Total Power Dissipation vs.
Ambient Temperature graph on page 4
Unit
V V mA µA mW °C °C °C
RECOMMENDED OPERATING RANGE
(TA = +25˚C, unless otherwise specified)
Parameter
Symbol MIN.
Drain to Source Voltage Drain Current
VDS +1 ID 5
TYP.
+2 10
MAX.
+3 15
Unit
V mA
This document is subject to change without notice.
2
ELECTRICAL CHARACTERISTICS
(TA = +25˚C, unless otherwise specified)
Parameter
Symbol
Condition
Gate to Source Leak Current Saturated Drain Current
IGSO IDSS
VGS = -3.
0V VDS = 2V, VGS = 0V
Gate to Source Cut-off Voltage VGS(off) VDS = 2V, ID = 100µA
Transconductance Noise Figure Associated Gain
Gm VDS = 2V, ID = 10mA
NF VDS = 2V, ID = 10mA, Ga f...
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