Super Low Noise FET
Description
DATASHEET
RF Low Noise FET
CE3520K3
20 / 24 GHz Super Low Noise FET in Hollow Plastic PKG
DESCRIPTION
Super Low Noise and High Gain Hollow (Air cavity) Plastic package
FEATURES
Super Low noise figure and high associated gain: NF = 0.
55 dB TYP.
, Ga = 13.
8 dB TYP.
@VDS = 2 V, ID = 10 mA, f = 20 GHz
NF = 0.
80 dB TYP.
, Ga = 13.
9 dB TYP.
@VDS = 2 V, ID = 10 mA, f = 24 GHz
PACKAGE
Micro-X plastic package
APPLICATIONS
K-Band LNB (Low Noise Block) Doppler Sensor Low Noise Amplifier for microwave
communication systems
ORDERING INFORMATION
Part Number
CE3520K3
Order Number
CE3520K3-C1
Package
Micro-X plastic package
Marking
C6
Description
• Embossed tape 8 mm wide • Pin 4 (Gate) faces the
perforation side of the tape • MOQ 10k pcs/reel
This document is subject to change without notice.
Date Published: July 2019 CDS-0019-04 (Issue C)
1
PIN CONFIGURATION AND INTERNAL BLOCK DIAGRAM
Pin No.
1 2 3 4
Pin Name
Source Drain Source Gate
CE3520K3
ABSOLUTE MAXIMUM RATINGS
(TA = +25˚C, unless otherwise specified)
Parameter
Symbol
Rating
Drain to Source Voltage
VDS 4.
0
Gate to Source Voltage
VGS -3.
0
Drain Current
ID IDSS
Gate Current
IG 80
Total Power Dissipation
Ptot 125
Channel Temperature
Tch +150
Storage Temperature
Tstg -55 to +125
Operation Temperature
Top -55 to +125Note
Note Refer to Total Power Dissipation vs.
Ambient Temperature graph on page 4
Unit
V V mA µA mW °C °C °C
RECOMMENDED OPERATING RANGE
(TA = +25˚C, unless otherwise specified)
Parameter
Symbol
MIN.
Drain to Source Voltage
VDS +1
Drain Current
ID 5
TYP.
+2 10
MAX.
+3 15
Unit
V mA
This document is subject to change without notice.
2
ELECTRICAL CHARACTERISTICS
(TA = +25˚C, unless otherwise specified)
Parameter
Symbol
Condition
Gate to Source Leak Current Saturated Drain Current
IGSO IDSS
VGS = -3.
0V VDS = 2V, VGS = 0V
Gate to Source Cut-off Voltage Transconductance
VGS(off) Gm
VDS = 2V, ID = 100µA VDS = 2V, ID = 10mA
Noise Figure1 Associated Gai...
Similar Datasheet
