12GHz Super Low Noise FET
Description
RF Low Noise FET
CE3512K2
12 GHz Super Low Noise FET in Hollow Plastic PKG
DESCRIPTION
Super Low Noise and High Gain Hollow (Air Cavity) Plastic package
FEATURES
Super Low noise figure and high associated gain: NF = 0.
30 dB TYP.
, Ga = 13.
7 dB TYP.
@VDS = 2 V, ID = 10 mA, f = 12 GHz
PACKAGE
Micro-X plastic package
APPLICATIONS
KU Band LNB (Low Noise Block) Suitable for 1st Stage
ORDERING INFORMATION
Part Number
CE3512K2
Order Number
CE3512K2-C1
Package
Micro-X plastic package
Marking
C5
Description
• Embossed tape 8 mm wide • Pin 4 (Gate) faces the
perforation side of the tape • MOQ 10 kpcs/reel
This document is subject to change without notice.
Date Published: Nov 2018 CDS-0018-05 (Issue B)
1
PIN CONFIGURATION AND INTERNAL BLOCK DIAGRAM
Pin No.
1 2 3 4
Pin Name
Source Drain Source Gate
CE3512K2
ABSOLUTE MAXIMUM RATINGS
(TA = +25˚C, unless otherwise specified)
Parameter
Symbol
Rating
Drain to Source Voltage
VDS 4.
0
Gate to Source Voltage
VGS -3.
0
Drain Current
ID IDSS
Gate Current
IG 80
Total Power Dissipation Channel Temperature
Ptot 125 Tch +150
Storage Temperature
Tstg -55 to +125
Operation Temperature
Top -55 to +125Note
Note Refer to Total Power Dissipation vs.
Ambient Temperature graph on page 4
Unit
V V mA µA mW °C °C °C
RECOMMENDED OPERATING RANGE
(TA = +25˚C, unless otherwise specified)
Parameter
Symbol
MIN.
Drain to Source Voltage
VDS +1
Drain Current
ID 5
TYP.
+2 10
MAX.
+3 15
Unit
V mA
This document is subject to change without notice.
2
ELECTRICAL CHARACTERISTICS
(TA = +25˚C, unless otherwise specified)
Parameter
Symbol
Condition
Gate to Source Leak Current Saturated Drain Current
IGSO IDSS
VGS = -3.
0V VDS = 2V, VGS = 0V
Gate to Source Cut-off Voltage Transconductance
VGS(off) Gm
VDS = 2V, ID = 120µA VDS = 2V, ID = 10mA
Noise Figure Associated Gain
NF VDS = 2V, ID = 10mA, Ga f = 12GHz
CE3512K2
MIN.
27 -1.
10 54 12.
5
TYP.
0.
4 47.
5 -0.
75 69 0.
30 13.
7
MAX.
10 68 -0.
39 0.
50 -
Unit
µA ...
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