Power MOSFET
Description
AUTOMOTIVE GRADE
Features Logic Level Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified *
Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area.
Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating .
These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.
AUIRL1404Z AUIRL1404ZS AUIRL1404ZL
HEXFET® Power MOSFET
VDSS
40V
RDS(on) typ.
2.
5m
max.
3.
1m
ID (Silicon Limited)
180A
ID (Package Limited)
160A
DD
GDS TO-220AB AUIRL1404Z
G Gate
S G
D2Pak AUIRL1404ZS
D Drain
S GD...
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