N-Channel Enhancement Mode Field Effect Transistor
Description
N-Channel Enhancement Insulated Gate Bipolar Transistor
HGH20N120A
█ Applications
• Induction heating and Microwave oven • Soft switching applications
█ Features
TO-3P
• Low saturation voltage, Vce(on)(typ)=2.
3V@Vge=15V • High input impedance • Field stop trench technology offer superior
conduction and switching performances, • High speed switching
█ Absolute Maximum Ratings
1―Gate，G 2―Collector，C 3―Emitter，E
Symbol
VCES VGES
Description Collector to Emitter Voltage Gate to Emitter Voltage
Ratings
1200 ±30
Units
V V
Collector Current（TC = 25℃）
IC
Collector Current（TC = 100℃）
40 20
A A
ICM (1) Pulsed Collector Current
80 A
IF
Diode continuous Forward current （TC = 100℃）
15
A
Maximum Power Dissipation（TC =
PD
25℃） Maximum Power Dissipation（TC =
100℃）
200 80
W W
TJ
Operating Junction Temperature
-55～+150 ℃
Tstg Storage Temperature Range -55～+150 ℃
Maximum ...
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