N-Channel Enhancement Mode Field Effect Transistor
Description
Shantou Huashan Electronic Devices Co.
, Ltd.
HFP7N60
N-Channel Enhancement Mode Field Effect Transistor
█ General Description
These are N-Channel enhancement mode silicon gate power field effect transistors.
They are advanced power MOSFETs designed, this advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode .
These devices are well suited for high efficiency switch mode power supply, power factor correction, electronic lamp ballast based on half bridge.
█ Features
• 7A, 600V(See Note), RDS(on) <1.
2Ω@VGS = 10 V • Fast switching • 100% avalanche tested • Improved dv/dt capability • RoHS compliant
█ Maximum Ratings（Ta=25℃ unless otherwise specified）
TO-220 1- G 2-D 3-S
Tstg——Storage Temperature ------------------------------------------------------ -55~150℃ Tj ——Operating Junction Temperature ----------------------...
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