N-Channel Enhancement Mode Field Effect Transistor
Description
Shantou Huashan Electronic Devices Co.
,Ltd.
HFP13N10
N-Channel Enhancement Mode Field Effect Transistor
█ General Description
These are N-Channel enhancement mode silicon gate power field effect transistors.
They are advanced power MOSFETs designed, this advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode .
These devices are well suited for low voltage applications such as audio amplifier, high efficiency switching DC/DC converters, and DC motor control.
█ Features
• 13A, 100V, RDS(on) <0.
10Ω@VGS = 10 V • High density cell design for ultra low Rdson • Fast switching • 100% avalanche tested • Improved dv/dt capability
█ Maximum Ratings（Ta=25℃ unless otherwise specified）
TO-220 1- G 2- D 3- S
Tstg——Storage Temperature ------------------------------------------------------ -55~150℃ Tj ——Operating Junction Tempera...
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