Power MOSFET - Infineon
Description
AUTOMOTIVE GRADE
Features Advanced Planar Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified *
Description Specifically designed for Automotive applications, this Stripe Planar design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area.
This benefit combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in Automotive and a wide variety of other applications.
AUIRF1404S AUIRF1404L
HEXFET® Power MOSFET
VDSS RDS(on)
typ.
max.
ID (Silicon Limited) ID (Package Limited)
40V 3.
5m 4.
0m 162A
75A
D D
S G
D2Pak AUIRF1404S
S D G
TO-262 AUIRF1404L
G Gate
D Drain
S Source
Base part number AUIRF1404L AUI...
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