Silicon N-Channel Power MOSFET
Description
Silicon N-Channel Power MOSFET
CS3N50 B3HY
○R
General Description：
VDSS
500 V
CS3N50 B3HY, the silicon N-channel Enhanced ID
3A
VDMOSFETs, is obtained by the self-aligned planar PD (TC=25℃) 35 W
Technology which reduce the conduction loss, improve RDS(ON)Typ
2.4 Ω
switching performance and enhance the avalanche energy.
The transistor can be used i...
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