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CS1N60C3H

Huajing Microelectronics

Silicon N-Channel Power MOSFET


Description
Silicon N-Channel Power MOSFET CS1N60 C3H ○R General Description: CS1N60 C3H, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching VDSS ID PD (TC=25℃) RDS(ON)Typ 600 1.0 30 8 performance and enhance the avalanche energy. The transistor can be used in various powe...



Huajing Microelectronics

CS1N60C3H

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