Thermally-Enhanced High Power RF LDMOS FET
Description
PTFB210801FA
Thermally-Enhanced High Power RF LDMOS FET 80 W, 28 V, 2110 – 2170 MHz
Description
The PTFB210801FA LDMOS FET is designed for use in multi-standard cellular power amplifier applications in the 2110 to 2170 MHz frequency band. Features include input and output matching, high gain and thermally-enhanced packages with earless flanges. Manufacture...
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