NPN silicon low-frequency high-power transistors
Description
3DD56/3DD57 NPN
ABCDE F
PCM TC=75℃
10
W
ICM Tjm Tstg
Rth
VCE=10V IC=0.2A
3 175 -55~150
10
A ℃ ℃
℃/W
V(BR)CBO
ICB=3mA
≥30
≥50
≥80 ≥110 ≥150 ≥200
V
V(BR)CEO
ICE=3mA
≥30
≥50
≥80 ≥110 ≥150 ≥200
V
V(BR)EBO
IEB=5mA
≥5.0
V
ICBO
VCB=20V
≤0.5
mA
ICEO IEBO VBEsat
VCEsat
VCE=20V VEB=4V IC=0.75A IB=0.15A
≤1.0 ≤0.5 ≤1.0 ≤1....
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