Silicon NPN Power Transistor
Description
isc Silicon NPN Power Transistor
DESCRIPTION ·High Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 800V(Min) ·Fast Speed ·High reliability ·Adoption of MBIT process ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Switching regulator and high voltage switching
applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
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Inchange Semiconductor
2SC3640 PDF File
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