Silicon NPN Power Transistor
Description
isc Silicon NPN Darlington Power Transistor
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 100V(Min) ·High DC Current Gain-
: hFE= 2000(Min)@ (VCE= 2V, IC= 2A) ·Low Collector Saturation Voltage-
: VCE(sat)= 1.5V(Max)@ (IC= 2A, IB= 2mA) ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed f...
Inchange Semiconductor
2SD2161 PDF File
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