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BDX33D

Silicon NPN Power Transistor

Description

isc Silicon NPN Darlington Power Transistor BDX33D DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 120V(Min) ·High DC Current Gain : hFE= 750(Min) @IC= 3A ·Low Collector Saturation Voltage : VCE(sat)= 2.5V(Max.)@ IC= 3A ·Complement to Type BDX34D ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIO...

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