Silicon PNP Power Transistors
Description
INCHANGE Semiconductor
isc Silicon PNP Darlington Power Transistor
isc Product Specification
KTB2510
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -150V(Min) ·Collector-Emitter Saturation Voltage-
: VCE(sat)= -2.5V(Max) @IC= -7A ·High DC Current Gain
: hFE= 5000(Min) @ IC= -7A, VCE= -4V ·Complement to Type KTD1510
APPLICATIONS ·High power ...
Inchange Semiconductor
KTB2510 PDF File
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