Silicon NPN Power Transistor
Description
INCHANGE Semiconductor
isc Silicon NPN Darlington Power Transistor
isc Product Specification
MJH11020
DESCRIPTION ·High DC Current Gain-
: hFE = 400(Min)@ IC= 10A ·Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = 200V(Min) ·Low Collector-Emitter Saturation Voltage-
: VCE(sat) = 2.5V(Max)@ IC= 10A = 4.0V(Max)@ IC= 15A
·Complement to Type MJH11019
APPLIC...
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