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MJ10012T

Silicon NPN Power Transistor

Description

isc Silicon NPN Darlington Power Transistor DESCRIPTION ·Collector-Emitter Sustaining Voltage- VCEO(SUS)= 400V(Min) ·High Power Dissipation ·DARLINGTON ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Automotive ignition ·Switching regulator ·Motor control applications ABSOLUTE MAXIMU...

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