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2N6107

GME

PNP Epitaxial Silicon Transistor


Description
PNP Epitaxial Silicon Transistor FEATURES z DC Curent Gain Specified to 7A. z Collector-Emitter Sustaining Voltage. z High Current Gain. Pb Lead-free Production specification 2N6107 TO-220AB MAXIMUM RATING operating temperature range applies unless otherwise specified Symbol Parameter Value Unit VCBO Collector-Base Voltage -80 V VCEO VEBO IC IB P...



GME

2N6107

PDF File 2N6107 PDF File


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