Silicon PNP Transistor
Description
isc Silicon PNP Power Transistor
2SA1225
DESCRIPTION ·High transition frequency ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation ·Complementary to 2SC2983
APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
-160
V
VCEO Collector-Emitter Voltage
-160
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current-Continuous
-1.
5
A
PC
Total Power Dissipation @ TC=25℃
1
W
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature Range
-55~150 ℃
isc website：www.
iscsemi.
com
1 isc & iscsemi is registered trademark
isc Silicon PNP Power Transistor
2SA1225
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)EBO Emitter-Base Breakdown Voltage
IE=-1mA,IC=0
V (BR)CEONOTE Collector-Emitter Breakdown Voltage IC=-10mA, IB=0
V(BR)CBO Collector-Base Breakdown Voltage
IC=-1mA ,IE=0
VCE(sat)
Collector-Emitter Saturation Voltage
IC= -0.
5A; IB= -50mA
VBE(on)
Base-Emitter Voltage
VCE=-5V, IC=-0.
5A
ICBO
Collector Cutoff Current
VCB= -160V; IE= 0
IEBO
Emitter Cutoff Current
VEB= -5V; IC=0
hFE
DC Current Gain
IC= -0.
1A; VCE= -5V
fT
Transition frequency
VCE=-10V ,IC=-100mA
Cob
Collector output capacitance
NOTE:Pulse test
VCB=-10V ,IE=0,f=1MHz
MIN -5 -160 -160
70
TYP
100 30
MAX
UNI T
V
V
V
-1.
5
V
-1.
0
V
-0.
1 μA
-0.
1 μA
240
MHz
pF
hFE Classifications
O
Y
70-140 120-240
isc website：www.
iscsemi.
com
2 isc & iscsemi is registered trademark
isc Silicon PNP Power Transistor
2SA1225
NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification.
The information contained herein is presented only as a guide for the applications of our products.
ISC products are intended for usage in general electronic equipment.
The products are not designed for use in e...
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