N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Description
Advanced Power Electronics Corp.
AP9977GM
RoHS-compliant Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Low On-resistance ▼ Single Drive Requirement ▼ Surface Mount Package
Description
D2
D2 D1 D1
G2 S2
G1 S1
BVDSS RDS(ON) ID
Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness.
D1
G1 G2 S1
60V 100mΩ
3.
3A
D2
S2
Absolute Maximum Ratings
Symbol
Parameter
VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃
Drain-Source Voltage
Gate-Source Voltage Continuous Drain Current3 Continuous Drain Current3 Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
TSTG
Storage Temperature Range
TJ Operating Junction Temperature Range
Thermal Data
Symbol
Parameter
Rthj-a
Maximum Thermal Resistance, Junction-ambient3
Rating 60 ±25 3.
3 2.
7 20 2
0.
016 -55 to 150 -55 to 150
Value 62.
5
Units V V A A A W
W/℃ ℃ ℃
Unit ℃/W
Data and specifications subject to change without notice
201108073-1/4
AP9977GM
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
BVDSS
ΔBVDSS/ΔTj
RDS(ON)
VGS(th) gfs IDSS
IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Rg
Drain-Source Breakdown Voltage
VGS=0V, ID=250uA
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA
Static Drain-Source On-Resistance2 VGS=10V, ID=3A
Gate Threshold Voltage Forward Transconductance
Drain-Source Leakage Current (Tj=25oC) Drain-Source Leakage Current (Tj=70oC)
Gate-Source Leakage Total Gate Charge2 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time2 Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance
VGS=4.
5V, ID=2A VDS=VGS, ID=250uA VDS=10V, ID=3A VDS=60V, VGS=0V VDS=48V, VGS=0V VGS=±25V ID=3A VDS=48V VGS=4.
5V VDS=30V ID=1A RG=3.
3Ω,VGS=10V RD=30Ω VGS=0V VDS=25V f=1.
0MHz
Gate Resistance
f=1.
0MHz
60 - - V
- 0.
04 - V/℃
- ...
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