HEMT D-Mode Amplifier
Description
GaN on Silicon General Purpose Amplifier DC - 2 GHz, 48 V, 100 W
Features
• GaN on Si HEMT D-Mode Amplifier • Suitable for Linear & Saturated Applications • Tunable from DC - 2 GHz • 48 V Operation • 20 dB Gain @ 900 MHz • 60% Drain Efficiency @ 900 MHz • 100% RF Tested • TO-272 Package • RoHS* Compliant and 260°C Reflow Compatible
Description
The NPT2022 GaN on silicon HEMT D-Mode amplifier optimized for DC - 2 GHz operation.
This device supports CW, pulsed, and linear operation with output power levels to 100 W in an industry standard plastic package with bolt down flange.
The NPT2022 is ideally suited for defense communications, land mobile radio, avionics, wireless infrastructure, ISM applications and VHF/ UHF/L/S-band radar.
Built using the SIGANTIC® process - a proprietary GaN-on-Silicon technology.
Functional Schematic
2 1
3
NPT2022
Rev.
V3
Ordering Information
Part Number NPT2022
NPT2022-SMB1 NPT2022-TR0250
Package Bulk Quantity Sample Board Tape & Reel
Pin Configuration
1
RFIN / VG
RF Input / Gate
2
RFOUT / VD
RF Output / Drain
3
Pad1
Ground / Source
1.
The exposed pad centered on the package bottom must be connected to RF and DC ground.
This path must also provide a low thermal resistance heat path.
* Restrictions on Hazardous Substances, compliant to current RoHS EU directive.
1
MACOM Technology Solutions Inc.
(MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.
macom.
com for additional data sheets and product information.
For further information and support please visit: https://www.
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DC-0006486
GaN on Silicon General Purpose Amplifier DC - 2 GHz, 48 V, 100 W
NPT2022
Rev.
V3
RF Electrical Specifications: TC = 25C, VDS = 48 V, IDQ = 600 mA
Parameter
Test Conditions
Symbol Min.
Typ.
Max.
Units
Small Signal Gain
CW, 900 MHz
GSS
-
21
-
dB
Saturated Output Power
CW, 900 MHz
PSAT
-
50.
5
-
dBm
Drain Efficiency at Saturatio...
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