GaN Wideband Transistor
Description
NPT2020
GaN Wideband Transistor 48 V, 50 W DC - 3.
5 GHz
Features
GaN on Si HEMT Depletion Mode Transistor Suitable for Linear and Saturated Applications Tunable from DC - 3.
5 GHz 48 V Operation 13.
5 dB Gain at 3.
5 GHz 55 % Drain Efficiency at 3.
5 GHz 100 % RF Tested Standard package with bolt down flange RoHS* Compliant and 260°C reflow compatible
Description
The NPT2020 GaN HEMT is a wideband transistor optimized for DC - 3.
5 GHz operation.
This device supports CW, pulsed, and linear operation with output power levels to 50 W (47 dBm) in an industry standard surface mount package.
The NPT2020 is ideally suited for defense communications, land mobile radio, avionics, wireless infrastructure, ISM applications and VHF/ UHF/L/S-band radar.
Built using the SIGANTIC® process - a proprietary GaN-on-Silicon technology.
Rev.
V1
Functional Schematic
RFIN / VG 1
2 RFOUT / VD
3
Flange
Ordering Information
Part Number
Package
NPT2020
Bulk Quantity
NPT2020-SMBPPR
Custom Sample Board1
NPT2020-SMB2
1250-1850 MHz Sample Board
1.
When ordering, specify application requirements (frequency, linearity, etc.
)
Pin Configuration
Pin No.
Pin Name
Function
1 RFIN / VG RF Input / Gate
2
RFOUT / VD
RF Output / Drain
3
Flange2
Ground / Source
2.
The Flange must be connected to RF and DC ground.
This path must also provide a low thermal resistance heat path.
* Restrictions on Hazardous Substances, European Union Directive 2011/65/EU.
1
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(MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
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NPT2020
GaN Wideband Transistor 48 V, 50 W DC - 3.
5 GHz
Rev.
V1
RF Electrical Specifications: TA = 25 °C, VDS = 48 V, IDQ = 350 mA
Parameter
Test Conditions
Symbol Min.
Typ.
Max.
Units
Small Signal Ga...
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