Silicon Epitaxial Planar Switching Diodes
Description
Switching Diodes Silicon Epitaxial Planar
1SS302A
1.
Applications
• Ultra-High-Speed Switching
2.
Features
(1) Fast reverse recovery time : trr = 1.
6 ns (typ.
) (2) AEC-Q101 qualified
3.
Packaging and Internal Circuit
1SS302A
1: Anode 1 2: Cathode 2 3: Cathode1 / Anode 2
USM
4.
Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 )
Characteristics
Symbol
Note
Rating
Unit
Peak reverse voltage
VRM
85
V
Reverse voltage
VR
80
Peak forward current
IFM
(Note 1)
300
mA
Average rectified current
IO
(Note 1)
100
Power dissipation
PD
(Note 2)
100
mW
Non-repetitive peak forward surge current
IFSM (Note 1), (Note 3)
2
A
Junction temperature
Tj
150
Storage temperature
Tstg
-55 to 150
Note: Using continuously under heavy loads (e.
g.
the application of high temperature/current/voltage and the significant change in temperature, etc.
) may cause this product to decrease in the reliability significantly even if the operating conditions (i.
e.
operating temperature/current/voltage, etc.
) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.
e.
reliability test report and estimated failure rate, etc).
Note 1: Unit rating.
Total rating = Unit rating × 70% Note 2: Mounted on a glass epoxy circuit board of 20 mm × 20 mm, Pad dimension of 4 mm × 4 mm.
Note 3: Measured with a 10 ms pulse.
©2017-2018 Toshiba Electronic Devices & Storage Corporation
1
Start of commercial production
2014-12
2018-11-16 Rev.
4.
0
5.
Electrical Characteristics (Unless otherwise specified, Ta = 25 )
Characteristics Forward voltage
Reverse current Total capacitance Reverse recovery time
Symbol
Test Condition
VF(1) VF(2) VF(3) IR(1) IR(2)
Ct trr
IF = 1 mA IF = 10 mA IF = 100 mA VR = 30 V VR = 80 V VR = 0 V, f = 1 MHz IF = 10 mA See Fig.
5.
1.
Min
Typ.
0.
60
0.
72...
Similar Datasheet
