Silicon NPN Power Transistor
Description
isc Silicon NPN Power Transistor
BUW92
DESCRIPTION ·High Current Capability ·Fast Switching Speed ·Low Saturation Voltage and High Gain ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS Designed for use in high frequency and efficiency converters such as motor controllers and industrial equipment such as: ·Switching regulators ·Motor control ·High frequency and efficiency converters
Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
VCEV
Collector-Emitter Voltage (VBE= -1.
5V)
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
IC
Collector Current-Continuous
ICM
Collector Current-Peak
IB
Base Current-Continuous
IBM
Base Current-peak
PC
Collector Power Dissipation @TC=25℃
Tj
Junction Temperature
Tstg
Storage Temperature Range
VALUE UNIT
350
V
250
V
7
V
12
A
18
A
2.
5
A
4
A
125
W
150
℃
-65~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance,Junction to Case 1.
2 ℃/W
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isc Silicon NPN Power Transistor
BUW92
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP.
MAX UNIT
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA; IB= 0
250
V
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 50mA; IC= 0
7
V
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 2A; IB= 0.
13A
0.
8
V
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 5A; IB= 0.
5A
0.
9
V
VBE(sat) Base-Emitter Saturation Voltage
ICBO
Collectro-Base Cutoff Current
IEBO
Emitter Cutoff Current
IC= 4A; IB= 0.
4A
VCB=350V; IE= 0 VCB=350V; IE= 0; TC=100℃
VEB= 5V; IC= 0
1.
3
V
0.
5 2.
5
mA
1.
0 mA
Switching times; Resistive Load
tr
Rise Time
ts
Storage Time
tf
Fall Time
IC= 6A; IB1= 0.
75A; VCC= 200V; VBB= -5V; RB2= 3.
3Ω; tp= 30μs
0.
4 μs 1.
6 μs 0.
3 μs
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