Silicon NPN Power Transistor
Description
isc Silicon NPN Power Transistor
BUW90
DESCRIPTION ·High Current Capability ·Fast Switching Speed ·Low Saturation Voltage and High Gain ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS Designed for use in high frequency and efficiency converters such as motor controllers and industrial equipment such as: ·Switching regulators ·Motor control ·High frequency and efficiency converters
Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
VCEV
Collector-Emitter Voltage (VBE= -1.
5V)
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
IC
Collector Current-Continuous
ICM
Collector Current-Peak
IB
Base Current-Continuous
IBM
Base Current-peak
PC
Collector Power Dissipation @TC=25℃
Tj
Junction Temperature
Tstg
Storage Temperature Range
VALUE UNIT
250
V
125
V
7
V
20
A
30
A
4
A
6
A
125
W
150
℃
-65~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance,Junction to Case 1.
2 ℃/W
isc website：www.
iscsemi.
com
1 isc & iscsemi is registered trademark
isc Silicon NPN Power Transistor
BUW90
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP.
MAX UNIT
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA ; IB= 0
125
V
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 50mA; IC= 0
7
V
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 5.
5A; IB= 0.
35A
0.
8
V
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 11A; IB= 1.
1A
0.
9
V
VBE(sat) Base-Emitter Saturation Voltage
ICBO
Collector-Base Cutoff Current
IEBO
Emitter Cutoff Current
IC= 11A; IB= 1.
1A
VCB= 250V; IE= 0 VCB= 250V; IE= 0;TC=100℃
VEB= 5V; IC= 0
1.
6
V
1.
0 5.
0
mA
1.
0 mA
Switching times; Resistive Load
tr
Rise Time
ts
Storage Time
tf
Fall Time
IC= 15A; IB1= 1.
8A; VCC= 100V; VBB= -5V; RB2= 1.
3Ω; tp= 30μs
1.
0 μs 1.
0 μs 0.
3 μs
NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time withou...
Similar Datasheet
