GaAs MMIC
Description
GaAs MMIC
CGY 180
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Datasheet
* Power amplifier for DECT and PCS application * Fully integrated 3 stage amplifier * Operating voltage range: 2.
7 to 6 V * Overall power added efficiency 35 % * Input matched to 50 Ω , simple output match
ESD: Electrostatic discharge sensitive device, observe handling precautions!
Type
Marking
Ordering code (taped)
Package 1)
CGY 180
CGY 180
Q68000-A8882
MW 12
Maximum ratings Characteristics Positive supply voltage Negative supply voltage 2) Supply current Maximum input power Channel temperature Storage temperature Total power dissipation (Ts < 81 °C)
Ts: Temperature at soldering point
Symbol VD VG
max.
Value 8 -8 1.
2 10 150 -55.
.
.
+150 2.
3
Unit V V A dBm °C °C W
ID Pin,max TCh Tstg Ptot PPulse
Pulse peak power Thermal Resistance Channel-soldering point
9.
5
W
RthChS
≤30
K/W
1) Plastic body identical to SOT 223, dimensions see chapter Package Outlines 2) VG = -8V only in combination with VTR = 0V; VG = -6V while VTR ≠ 0V
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1/15
21.
02.
96 HL EH PD 21
GaAs MMIC
Functional Block Diagram:
VG
CGY 180
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(2)
VD1 (8)
VD2
(9)
VD3 (11)
VTR (1)
Control circuit
Pin (7)
Pout
(11)
GND1 (6)
GND2 (3,4,5,10)
Pin # 1 2 3 4 5 6 7 8 9 10 11 12 VTR VG GND2 GND2 GND2 GND1 RFin VD1 VD2 GND2
Configuration Control voltage for transmit (0V) / receive (open) mode Negative voltage at control circuit (-4V.
.
.
-8V) RF and DC ground of the 2nd and 3rd stage RF and DC ground of the 2nd and 3rd stage RF and DC ground of the 2nd and 3rd stage RF and DC ground of the 1st stage RF input power Pos.
drain voltage of the 1st stage Pos.
drain voltage of the 2nd stage RF and DC ground of the 2nd and 3rd stage
VD3, Pout Pos.
drain voltage of the 3rd stage, RF output power n.
c.
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