STD5NK40Z
Description
STP5NK40Z - STP5NK40ZFP STD5NK40Z - STD5NK40Z-1
N-CHANNEL 400V - 1.
47Ω - 3A TO-220/TO-220FP/DPAK/IPAK Zener-Protected SuperMESH™Power MOSFET
TYPE
VDSS RDS(on)
ID
Pw
STP5NK40Z STP5NK40ZFP STD5NK40Z STD5NK40Z-1
400 V < 1.
8 Ω 3 A 45 W 400 V < 1.
8 Ω 3 A 20 W 400 V < 1.
8 Ω 3 A 45 W 400 V < 1.
8 Ω 3 A 45 W
s TYPICAL RDS(on) = 1.
47 Ω s EXTREMELY HIGH dv/dt CAPABILITY s 100% AVALANCHE TESTED s GATE CHARGE MINIMIZED s VERY LOW INTRINSIC CAPACITANCES s VERY GOOD MANUFACTURING
REPEATIBILITY
DESCRIPTION
The SuperMESH™ series is obtained through an extreme optimization of ST’s well established stripbased PowerMESH™ layout.
In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications.
Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh™ products.
TO-220
3 1 DPAK
3 2 1
TO-220FP
IPAK
3
2 1
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s IDEAL FOR OFF-LINE POWER SUPPLIES,
ADAPTORS AND PFC s LIGHTING
ORDERING INFORMATION
SALES TYPE
MARKING
STP5NK40Z
P5NK40Z
STP5NK40ZFP
P5NK40ZFP
STD5NK40ZT4
D5NK40Z
STD5NK40Z-1
D5NK40Z
February 2003
PACKAGE TO-220
TO-220FP DPAK IPAK
PACKAGING TUBE TUBE
TAPE & REEL TUBE
1/13
STP5NK40Z - STP5NK40ZFP - STD5NK40Z - STD5NK40Z-1
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS Drain-source Voltage (VGS = 0)
VDGR
Drain-gate Voltage (RGS = 20 kΩ)
VGS Gate- source Voltage
ID Drain Current (continuous) at TC = 25°C
ID Drain Current (continuous) at TC = 100°C
IDM ( ) Drain Current (pulsed)
PTOT
Total Dissipation at TC = 25°C
Derating Factor
VESD(G-S) Gate source ESD(HBM-C=100pF, R=1.
5KΩ)
dv/dt (1) Peak Diode Recovery voltage slope
VISO
Insulation Withstand Voltage (DC)
Tj Operating Junction Temperature Tstg Storage Temperature
( ) Pulse width limited by safe operating area (1) ISD ≤3A, di/dt ≤200A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX.
(*) Limited only by maximum t...
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