Dual N-Channel Enhancement Mode Field Effect Transistor
Description
CEG9926
Nov. 2002
Dual N-Channel Enhancement Mode Field Effect Transistor
FEATURES
20V , 4.5A , RDS(ON)=30mΩ @VGS=4.5V. RDS(ON)=40m Ω @VGS=2.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TSSOP-8 for Surface Mount Package.
G2 S2 S2 D2
D1 1 S1 2 S1 3 G1 4
8 D2 7 S2 6 S2 5 G2
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Parameter Drain-Sourc...
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CEG9926 PDF File
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