Silicon NPN Power Transistor
Description
isc Silicon NPN Power Transistor
MJE8501
DESCRIPTION ·Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = 800V(Min) ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for high-voltage ,high-speed, power switching in
inductive circuits where fall time is critical.
They are particularly suited for line operated switch-mode applications.
Typical applications: ·Switching regulators ·Inverters ·Solenoid and relay drivers ·Motor controls ·Deflection circuits
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCBO Collector- Base Voltage
1400
V
VCEO(SUS) Collector-Emitter Voltage
800
V
VEBO
Emitter-Base Voltage
8
V
IC
Collector Current-Continuous
2.
5
A
ICM
Collector Current-Peak
5
A
IB
Base Current-Continuous
2
A
IBM
Base Current-Peak
4
A
PC
Collector Power Dissipation@TC=25℃
65
W
TJ
Junction Temperature
125
℃
Tstg
Storage Temperature
-65~125 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
MAX 1.
54
UNIT ℃/W
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isc Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining Voltage IC=10mA ; IB=0
VCE(sat)-1
Collector-Emitter Saturation Voltage
IC= 1A; IB= 0.
33A IC= 1A; IB= 0.
33A,TC=100℃
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 2.
5A; IB= 1A
VBE(sat) Base-Emitter Saturation Voltage
ICBO
Collector Cutoff Current
IC= 1A; IB= 0.
33A IC= 1A; IB= 0.
33A,TC=100℃
VCB=1400V;IE=0 VCB=1400V;IE=0;TC=100℃
ICEO
Collector Cutoff Current
VCE= 800V;TC= 100℃
IEBO
Emitter Cutoff Current
VEB= 7V; IC=0
hFE
DC Current Gain
IC= 0.
5A ; VCE= 5V
COB
Output Capacitance
IE= 0; VCB= 10V; ftest=1.
0kHz
MJE8501
MIN TYP.
MAX UNIT
800
V
2.
0 3.
0
V
5.
0 V
1.
5 1.
5
V
0.
25 5.
0
mA
5.
0 mA
1.
0 mA
7.
5
50
pF
NOTICE： ISC reserves the ...
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