N-Channel MOSFET Transistor
Description
INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
IRFP244A
FEATURES ·Drain Current –ID= 16A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 250V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 0.
28Ω(Max) ·Fast Switching
DESCRIPTION ·Designed for use in switch mode power supplies and general
purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VDSS VGS
Drain-Source Voltage Gate-Source Voltage-Continuous
250 ±20
V V
ID Drain Current-Continuous
16 A
IDM Drain Current-Single Pluse
64 A
PD Total Dissipation @TC=25℃
180 W
TJ
Max.
Operating Junction Temperature
-55~150 ℃
Tstg Storage Temperature
-55~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance, Junction to Case
0.
83 ℃/W
Rth j-a Thermal Resistance, Junction to Ambient 30 ℃/W
isc website：www.
iscsemi.
cn
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INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
IRFP244A
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS Drain-Source Breakdown Voltage
VGS= 0; ID= 0.
25mA
VGS(th) Gate Threshold Voltage RDS(on) Drain-Source On-Resistance
IGSS Gate-Body Leakage Current
VDS= VGS; ID= 0.
25mA VGS= 10V; ID= 8A VGS= ±20V;VDS= 0
IDSS Zero Gate Voltage Drain Current
VDS= 250V; VGS= 0
VSD Forward On-Voltage
IS= 16A; VGS= 0
MIN MAX UNIT
250 V
24V
0.
28 Ω
±100
nA
250 μA
1.
8 V
·
isc website：www.
iscsemi.
cn
2 isc & iscsemi is registered trademark
PDF pdfFactory Pro
www.
fineprint.
cn
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