Power MOSFET
Description
$GYDQFHG 3RZHU 026)(7
IRFW/I614A
FEATURES
♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10µA (Max.
) @ VDS = 250V ♦ Lower RDS(ON): 1.
393Ω (Typ.
)
Absolute Maximum Ratings
Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt
PD
TJ , TSTG
TL
Characteristic
Drain-to-Source Voltage
Continuous Drain Current (TC=25°C)
Continuous Drain Current (TC=100°C)
Drain Current-Pulsed
(1)
Gate-to-Source Voltage
Single Pulsed Avalanche Energy
(2)
Avalanche Current
(1)
Repetitive Avalanche Energy
(1)
Peak Diode Recovery dv/dt Total Power Dissipation (TA=25°C) * Total Power Dissipation (TC=25°C) Linear Derating Factor
(3)
Operating Junction and
Storage Temperature Range
Maximum Lead Temp.
for Soldering
Purposes, 1/8 from case for 5-seconds
BVDSS = 250 V RDS(on) = 2.
0 Ω ID = 2.
8 A
D2-PAK I2-PAK
2
1 3
1 2 3
1.
Gate 2.
Drain 3.
Source
Value 250 2.
8 1.
8 8.
5 ±30 49 2.
8
4 4.
8 3.
1 40 0.
32
- 55 to +150
300
Units V
A
A V mJ A mJ V/ns W W W/°C
°C
Thermal Resistance
Symbol
Characteristic
Typ.
RθJC RθJA RθJA
Junction-to-Case Junction-to-Ambient * Junction-to-Ambient
----
* When mounted on the minimum pad size recommended (PCB Mount).
Max.
3.
14 40 62.
5
Units °C/W
Rev.
B
©1999 Fairchild Semiconductor Corporation
IRFW/I614A
1&+$11(/ 32:(5 026)(7
Electrical Characteristics (TC=25°C unless otherwise specified)
Symbol BVDSS
∆BV/∆TJ VGS(th)
IGSS
IDSS
RDS(on)
gfs Ciss Coss Crss td(on)
tr td(off)
tf Qg Qgs Qgd
Characteristic
Min.
Typ.
Max.
Units
Test Condition
Drain-Source Breakdown Voltage Breakdown Voltage Temp.
Coeff.
Gate Threshold Voltage Gate-Source Leakage , Forward Gate-Source Leakage , Reverse
Drain-to-Source Leakage Current
Static Drain-Source On-State Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source C...
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