IGBT Module
Description
MITSUBISHI IGBT MODULES
CM300DU-24F
HIGH POWER SWITCHING USE
CM300DU-24F
¡IC .
.
300A ¡VCES .
.
1200V ¡Insulated Type ¡2-elements in a pack
APPLICATION General purpose inverters & Servo controls, etc
OUTLINE DRAWING & CIRCUIT DIAGRAM
Dimensions in mm
Tc measured point 110
E2 G2
RTC
62 ±0.
25
6
C2E1
E2
RTC
C1
15
(8.
25)
80
G1 E1
CM
(18.
5)
4-φ6.
5 MOUNTING HOLES 3-M6 NUTS
C2E1
E2
C1
25 93 ±0.
25 18 14 7 18 14
25
21.
5
2.
5
18.
25
CIRCUIT DIAGRAM
7
18 14
4 2.
8
7.
5 8.
5
0.
5 0.
5
0.
5 0.
5
29 +1.
0 –0.
5
21
LABEL
G1 E1
6
E2 G2
Aug.
1999
4
MITSUBISHI IGBT MODULES
CM300DU-24F
HIGH POWER SWITCHING USE
MAXIMUM RATINGS (Tj = 25°C)
Symbol VCES VGES IC ICM IE (Note 1) IEM (Note 1) PC (Note 3) Tj Tstg Viso — — Parameter Collector-emitter voltage Gate-emitter voltage Collector current Emitter current Maximum collector dissipation Junction temperature Storage temperature Isolation voltage Torque strength Weight G-E Short C-E Short TC = 25°C Pulse TC = 25°C Pulse TC = 25°C Conditions Ratings 1200 ±20 300 600 300 600 960 –40 ~ +150 –40 ~ +125 2500 3.
5 ~ 4.
5 3.
5 ~ 4.
5 580 Unit V V A A W °C °C V N•m N•m g
(Note 2) (Note 2)
Main terminal to base plate, AC 1 min.
Main Terminal M6 Mounting holes M6 Typical value
ELECTRICAL CHARACTERISTICS (Tj = 25°C)
Symbol ICES VGE(th) IGES VCE(sat) Cies Coes Cres QG td(on) tr td(off) tf trr (Note 1) Qrr (Note 1) VEC(Note 1) Rth(j-c)Q Rth(j-c)R Rth(c-f) Rth(j-c’)Q RG Parameter Collector cutoff current Gate-emitter threshold voltage Gate leakage current Collector-emitter saturation voltage Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time Reverse recovery time Reverse recovery charge Emitter-collector voltage Thermal resistance*1 Test conditions VCE = VCES, VGE = 0V IC = 30mA, VCE = 10V VGE = VCE...
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