N-CHANNEL MOSFET
Description
R
JCS630
MAIN CHARACTERISTICS
ID VDSS Rdson(@Vgs=10V) Qg
9.
0A 200 V 0.
4Ω 22nC
Package
N N- CHANNEL MOSFET
UPS
APPLICATIONS
High efficiency switch mode power supplies
Electronic lamp ballasts based on half bridge
UPS
Crss ( 22pF) dv/dt RoHS
FEATURES
Low gate charge Low Crss (typical 22pF ) Fast switching 100% avalanche tested Improved dv/dt capability RoHS product
ORDER MESSAGE
Order codes
JCS630V-O-V-N-B JCS630R-O-R-N-B JCS630R-O-R-N-A JCS630S-O-S-N-B JCS630B-O-B-N-B JCS630C-O-C-N-B JCS630F-O- F-N-B
Marking
JCS630V JCS630R JCS630R JCS630S JCS630B JCS630C JCS630F
Package Halogen Free Packaging
IPAK DPAK DPAK TO-263 TO-262 TO-220C TO-220MF
NO NO NO NO NO NO NO
Tube Tube Brede Tube Tube Tube Tube
Device Weight 0.
35 g(typ) 0.
30 g(typ) 0.
30 g(typ) 1.
37 g(typ) 1.
71 g(typ) 2.
15 g(typ) 2.
20 g(typ)
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ABSOLUTE RATINGS (Tc=25℃)
Value JCS630V/R JCS630S/B/C
Parameter
Symbol
- Drain-Source Voltage
VDSS
200
Drain Current -continuous
ID T=25℃ T=100℃
9.
0 5.
7
( 1) Drain Current -pulse (note 1)
Gate-Source Voltage
IDM VGSS
36 ±30
( 2)
Single Pulsed Avalanche Energy (note 2) ( 1) Avalanche Current (note 1)
EAS IAR
160 9.
0
( 1)
Repetitive Avalanche Current (note 1)
EAR
7.
2
( 3) Peak Diode Recovery dv/dt (note 3)
dv/dt
5.
5
Power Dissipation
PD TC=25℃ -Derate
above 25℃
48 0.
39
72 0.
57
Operating and Storage Temperature Range
TJ,TSTG
-55~+150
Maximum Lead Temperature for Soldering Purposes
TL
300
*
*Drain current limited by maximum junction temperature
JCS630
JCS630F
Unit
V
9.
0* A 5.
7* A
36* A
V
mJ
A
mJ
V/ns 38 W 0.
3 W/℃
℃ ℃
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ELECTRICAL CHARACTERISTIC
JCS630
Parameter Off –Characteristics - Drain-Source Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current
Gate-body leakage current, forward Gate-body leakage current, reverse On-Characteristics Gate Threshold Voltage Static Drai...
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