Transient Voltage Suppressors - Vishay
Description
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SM8S10A thru SM8S43A
Vishay General Semiconductor
Surface Mount PAR® Transient Voltage Suppressors
High Temperature Stability and High Reliability Conditions
DO-218AB
Cathode
Anode
PRIMARY CHARACTERISTICS
VBR VWM PPPM (10 x 1000 μs) PPPM (10 x 10 000 μs) PD IFSM TJ max.
Polarity
11.
1 V to 52.
8 V 10 V to 43 V 6600 W 5200 W 8W 700 A 175 °C Unidirectional
Package
DO-218AB
FEATURES • Junction passivation optimized design passivated
anisotropic rectifier technology • TJ = 175 °C capability suitable for high reliability
and automotive requirement • Available in unidirectional polarity only • Low leakage current • Low forward voltage drop • High surge capability • Meets ISO7637-2 surge specification (varied by test
condition) • Meets MSL level 1, per J-STD-020, LF maximum peak of
245 °C • AEC-Q101 qualified • Material categorization: for definitions of compliance
please see www.
vishay.
com/doc?99912
TYPICAL APPLICATIONS Use in sensitive electronics protection against voltage transients induced by inductive load switching and lighting, especially for automotive load dump protection application.
MECHANICAL DATA Case: DO-218AB Molding compound meets UL 94 V-0 flammability rating Base P/NHE3_X - RoHS-compliant and AEC-Q101 qualified (“X” denotes revision code e.
g.
A, B, .
.
.
) Terminals: matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 HE3 suffix meets JESD 201 class 2 whisker test Polarity: heatsink is anode
MAXIMUM RATINGS (TC = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Peak pulse power dissipation
with 10/1000 μs waveform with 10/10 000 μs waveform
PPPM
Power dissipation on infinite heatsink at TC = 25 °C (fig.
1) Peak pulse current with 10/1000 μs waveform Peak forward surge current 8.
3 ms single half sine-wave Operating junction and storage temperature range
PD IPPM (1)
IFSM TJ, TSTG
Note (1) Non-repetitive current pulse derated above TA = 25 °C
VALUE 6600 5200 8.
0
See next table 700
-55 to +175
UNIT
W
W A A °C
Revi...
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