N-Channel Trench MOSFET
Description
HRLP150N10K
HRLP150N10K
100V N-Channel Trench MOSFET
FEATURES
Originative New Design Superior Avalanche Rugged Technology Excellent Switching Characteristics Unrivalled Gate Charge : 80 nC (Typ.
) Extended Safe Operating Area Lower RDS(ON) : 13 Pȍ (Typ.
) @VGS=10V Lower RDS(ON) : 14 Pȍ (Typ.
) @VGS=4.
5V 100% Avalanche Tested
Mar 2016
BVDSS = 100 V RDS(on) typ = 13 Pȍ ID = 70 A
TO-220
1 23
1.
Gate 2.
Drain 3.
Source
Absolute Maximum Ratings TC=25 unless otherwise specified
Symbol
Parameter
Value
VDSS
ID
IDM VGS EAS EAR
PD
Drain-Source Voltage
Drain Current Drain Current Drain Current
– Continuous (TC = 25)
– Continuous (TC = 100)
– Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Repetitive Avalanche Energy
(Note 1)
Power Dissipation (TC = 25) - Derate above 25
100 70 49 245 ρ25 190 13.
6 136 0.
9
TJ, TSTG TL
Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds
-55 to +175 300
Units V A A A V mJ mJ W
W/
Thermal Resistance Characteristics
Symbol RșJC RșCS RșJA
Parameter Junction-to-Case Case-to-Sink Junction-to-Ambient
Typ.
-0.
5 --
Max.
1.
1 -62.
5
Units /W
క͑΄Ͷ;ͺΈ͑Ͷ·͟Ͳͣ͝;ΒΣ͑ͣͧ͑͢͡
HRLP150N10K
Electrical Characteristics TJ=25 qC unless otherwise specified
Symbol
Parameter
Test Conditions
Min Typ Max Units
On Characteristics
VGS RDS(ON)
Gate Threshold Voltage
Static Drain-Source On-Resistance
gFS Forward Transconductance
Off Characteristics
VDS = VGS, ID = 250 Ꮃ VGS = 10 V, ID = 20 A VGS = 4.
5 V, ID = 15 A VDS = 5, ID = 20 A
1.
0 ----
BVDSS IDSS IGSS
Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Current
VGS = 0 V, ID = 250 Ꮃ VDS = 80 V, VGS = 0 V VDS = 80 V, TJ = 125 VGS = ρ20 V, VDS = 0 V
100 ----
Dynamic Characteristics
Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate Resistance
Switching Characteristics
VDS = 25 V, VGS = 0 V, f = 1.
...
Similar Datasheet
