Power MOSFET
Description
Lead-Free
PD- 95669
IRFP044PbF
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IRFP044PbF
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IRFP044PbF
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IRFP044PbF
Peak Diode Recovery dv/dt Test Circuit
+ Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer
-
+
- -+
• dv/dt controlled by RG • ISD controlled by Duty Factor "D" • D.
U.
T.
- Device Under Test
+ -
* Reverse Polarity for P-Channel
** Use P-Channel Driver for P-Channel Measurements
Driver Gate Drive
P.
W.
Period
D=
P.
W.
Period
VGS=10V
D.
U.
T.
ISD Waveform
Reverse Recovery Current
Body Diode Forward
Current di/dt
D.
U.
T.
VDS Waveform
Diode Recovery
dv/dt
Re-Applied Voltage
Body Diode Inductor Curent
Forward Drop
Ripple ≤ 5%
VDD ISD
*** VGS = 5.
0V for Logic Level and 3V Drive Devices Fig -14 For N Channel HEXFETS
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IRFP044PbF
TO-247AC Package Outline Dimensions are shown in millimeters (inches)
TO-247AC Part Marking Information
EXAMPLE: T HIS IS AN IRFPE30 WIT H ASSEMBLY LOT CODE 5657
ASS EMBLED ON WW 35, 2000
IN T HE ASSEMBLY LINE "H"
Note: "P" in assembly line position indicates "Lead-Free"
INTERNAT IONAL RECT IFIER LOGO
AS S E MB LY LOT CODE
IRF PE 30 035H
56 57
PART NUMBER
DATE CODE YEAR 0 = 2000 WEEK 35 LINE H
Data and specifications subject to change without notice.
IR WORLD HEADQUARTERS: 233 Kansas St.
, El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903
Visit us at www.
irf.
com for sales contact information.
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