N-Channel MOSFET
Description
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
NP90N06VLG
SWITCHING N-CHANNEL POWER MOS FET
DESCRIPTION The NP90N06VLG is N-channel MOS Field Effect Transistor designed for high current switching applications.
ORDERING INFORMATION
PART NUMBER
NP90N06VLG-E1-AY Note NP90N06VLG-E2-AY Note
LEAD PLATING Pure Sn (Tin)
PACKING Tape 2500 p/reel
Note Pb-free (This product does not contain Pb in external electrode.
)
PACKAGE TO-252 (MP-3ZP) typ.
0.
27 g
FEATURES • Logic level • Built-in gate protection diode • Super low on-state resistance
RDS(on)1 = 7.
8 mΩ MAX.
(VGS = 10 V, ID = 45 A) RDS(on)2 = 12.
5 mΩ MAX.
(VGS = 4.
5 V, ID = 35 A) • High current rating ID(DC) = ±90 A • Low input capacitance Ciss = 4600 pF TYP.
• Designed for automotive application and AEC-Q101 qualified
(TO-252)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
60
Gate to Source Voltage (VDS = 0 V)
VGSS
±20
Drain Current (DC) (TC = 25°C) Drain Current (pulse) Note1
ID(DC) ID(pulse)
±90 ±180
Total Power Dissipation (TC = 25°C)
PT1
105
Total Power Dissipation (TA = 25°C)
Channel Temperature
Storage Temperature Repetitive Avalanche Current Note2 Repetitive Avalanche Energy Note2
PT2 Tch Tstg IAR EAR
1.
2 175 −55 to +175 32 102
V V A A W W °C °C A mJ
Notes 1.
PW ≤ 10 μs, Duty Cycle ≤ 1% 2.
Tch ≤ 150°C, RG = 25 Ω
THERMAL RESISTANCE Channel to Case Thermal Resistance
Channel to Ambient Thermal Resistance
Rth(ch-C) Rth(ch-A)
1.
43 125
°C/W °C/W
The information in this document is subject to change without notice.
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confirm that this is the latest version.
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Please check with an NEC Electronics sales representative for availability and additional information.
Document No.
D19794EJ1V0DS00 (1st edition) Date Published May 2009 NS Printed in Japan
2009
NP90N06VLG
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
Zero Gate Voltage Drain Curren...
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