SCHOTTKY DIODE
Description
BAS70W SERIES SCHOTTKY DIODE
FEATURES
Power dissipation
PD: 200 mW (Tamb=25℃) Collector current
IF: 70 mA Collector-base voltage
VR: 70 V Operating and storage junction temperature range
TJ, Tstg: -55℃ to +150℃
SOT-323
1.
BASE 2.
EMITTER
3.
COLLECTOR
1.
25¡ À0.
05
2.
30¡ À0.
05
1.
01 REF
0.
30 2.
00¡ À0.
05
1.
30¡ À0.
03
Unit: mm
BAS70W Marking: K73 BAS70W-04 Marking: K74
BAS70W-05 Marking: K75
BAS70W-06 Marking: K76
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter Reverse breakdown voltage Reverse voltage leakage current Forward voltage Diode capacitance Reveres recovery time
Symbol V(BR) R
IR VF CD trr
Test conditions
IR= 10µA
VR=50V IF=1mA IF=15mA VR=0V, f=1MHz IF=10mA through IR=10mA to IR=1mA
MIN MAX
70
100 410 1000
2
5
UNIT V
nA
mV
pF
nS
...
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