N-Channel MOSFET Transistor
Description
isc N-Channel MOSFET Transistor
DESCRIPTION ·Drain Current –ID= 15A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 350V(Min) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·high speed power switching
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER
VALUE
UNIT
VDSS
Drain-Source Voltage (VG...
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