SILICON EPITAXIAL PLANAR DIODE
Description
1SS187
SILICON EPITAXIAL PLANAR DIODE
Features • Small package • Low forward voltage • Fast reverse recovery time • Small total capacitance
Applications • Ultra high speed switching application
Absolute Maximum Ratings (Ta = 25 OC) Parameter
Maximum Peak Reverse Voltage Reverse Voltage Average Forward Current Maximum Peak Forward Current Surge Current (10 ms) Power Dissipation Junction Temperature Storage Temperature Range
Characteristics at Ta = 25 OC Parameter
Forward Voltage at IF = 100 mA Reverse Current at VR = 30 V at VR = 80 V Total Capacitance at VR = 0 , f = 1 MHz Reverse Recovery Time at IF = 10 mA
3
12
Marking Code: D3 SOT-23 Plastic Package
Symbol
VRM VR IO IFM IFSM Ptot Tj Ts
Value 85 80 100 300 2 150 150
- 55 to + 150
Unit V V mA mA A
mW OC OC
Symbol VF
IR
CT trr
Max.
1.
2
0.
1 0.
5 4
4
Unit V µA
pF ns
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 22/01/2008
1SS187
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 22/01/2008
...
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