2SD2527
Description
Power Transistors
2SD2527
Silicon NPN triple diffusion planar type
For power amplification with high forward current transfer ratio
Unit: mm
s Features
q High foward current transfer ratio hFE q Satisfactory linearity of foward current transfer ratio hFE q Full-pack package which can be installed to the heat sink with
one screw
s Absolute Maximum Ratings (TC=25˚C)
Parameter
Symbol
Ratings
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Base current
Collector power TC=25°C
dissipation
Ta=25°C
VCBO VCEO VEBO ICP IC IB
PC
80 60 6 8 4 1 40 2.
0
Junction temperature Storage temperature
Tj 150 Tstg –55 to +150
Unit V V V A A A
W
˚C ˚C
13.
7±0.
2 4.
2±0.
2
15.
0±0.
5
9.
9±0.
3
4.
6±0.
2 2.
9±0.
2
3.
0±0.
5
φ3.
2±0.
1
1.
4±0.
2 1.
6±0.
2
0.
8±0.
1
2.
54±0.
3 1 2 3 5.
08±0.
5
2.
6±0.
1 0.
55±0.
15
1:Base 2:Collector 3:Emitter TO–220D Full Pack Package
s Electrical Characteristics (TC=25˚C)
Parameter
Symbol
Conditions
min typ max Unit
Collector cutoff current
Emitter cutoff current Collector to emitter voltage Forward current transfer ratio
ICBO ICEO IEBO VCEO hFE*
VCB = 80V, IE = 0 VCE = 40V, IB = 0 VEB = 6V, IC = 0 IC = 25mA, IB = 0 VCE = 4V, IC = 0.
8A
100 µA 100 µA 100 µA 60 V 500 2000
Collector to emitter saturation voltage Transition frequency Storage time
VCE(sat) fT tstg
IC = 3A, IB = 0.
075A VCE = 12V, IC = 0.
3A, f = 10MHz IC = 3A, IB1 = 0.
06A, IB2 = – 0.
06A, VCC = 50V
0.
7 V 30 MHz 20 µs
*hFE Rank classification
Rank
Q
P
hFE 500 to 1200 800 to 2000
1
Collector current IC (A)
Power Transistors
IC — VCE
1.
6 TC=25˚C
1.
4
1.
2 1.
0 IB=1.
0mA
0.
9mA 0.
8mA
0.
8 0.
7mA 0.
6mA
0.
6 0.
5mA 0.
4mA
0.
4 0.
3mA
0.
2 0.
2mA 0.
1mA
0 0 2 4 6 8 10 12
Collector to emitter voltage VCE (V)
hFE — IC
104 VCE=4V
103
Forward current transfer ratio hFE
102
Collector current IC (A)
10 10–2
10–1
1
Collector current IC (A)
10
Area of safe operation (ASO)
Non repetitive pulse 30 TC=25˚C
10 ICP
IC 10ms 3
t=1ms
...
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