isc N-Channel MOSFET Transistor
DESCRIPTION ·Drain Current –ID=2A@ TC=25℃ ·Drain Source Voltage-
: VDSS=900V(Min) ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed especially for high voltage. ·high speed power switching.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER
VALUE UNIT
VDSS
Drain-Sou...
