N-Channel MOSFET Transistor
Description
INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
2SK792
DESCRIPTION ·Drain Current –ID=3A@ TC=25℃ ·Drain Source Voltage-
: VDSS=900V(Min) ·Fast Switching Speed
APPLICATIONS ·Designed for high voltage, high speed power switching
applications such as switching regulators, converters, solenoid and relay drivers.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER
VALUE UNIT
VDSS VGS ID Ptot Tj Tstg
Drain-Source Voltage (VGS=0)
900 V
Gate-Source Voltage
±20
V
Drain Current-continuous@ TC=25℃ 3 A
Total Dissipation@TC=25℃
100 W
Max.
Operating Junction Temperature
150
℃
Storage Temperature Range
-55~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Rth j-a
Thermal Resistance,Junction to Case
1.
0
Thermal Resistance,Junction to Ambient 62.
5
℃/W ℃/W
isc website：www.
iscsemi.
cn
1 isc & iscsemi is registered trademark
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INCHANGE Semiconductor
isc N-Channel Mosfet Transistor
isc Product Specification
2SK792
·ELECTRICAL CHARACTERISTICS (TC=25℃)
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS Drain-Source Breakdown Voltage VGS=0; ID= 10mA
VGS(th) Gate Threshold Voltage
VDS=10 VGS; ID=1mA
RDS(on) Drain-Source On-stage Resistance VGS=10V; ID= 1.
5A
IGSS Gate Source Leakage Current
VGS= ±20V;VDS= 0
IDSS Zero Gate Voltage Drain Current VDS=900V; VGS= 0
tr Rise time
ton Turn-on time tf Fall time
VGS=10V;ID=1.
5A; RL=133Ω
toff Turn-off time
MIN TYP MAX UNIT
900 V
1.
5 3.
5 V
3.
3 4.
5
Ω
±100 nA
300 uA
55 120 ns
70 165 ns
60 120 ns
280 550
ns
isc website：www.
iscsemi.
cn
2 isc & iscsemi is registered trademark
PDF pdfFactory Pro
www.
fineprint.
cn
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