N-Channel MOSFET Transistor
Description
isc N-Channel MOSFET Transistor
DESCRIPTION ·Drain Current –ID=7A@ TC=25℃ ·Drain Source Voltage-
: VDSS=800V(Min) ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·low on–resistance ·High speed switching ·Low drive current ·No secondary breakdown ·Suitable for switchingregulator, DC–DC convertor
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER
VALUE UNIT
VDSS
Drain-Source Voltage (VGS=0)
800
V
VGS
Gate-Source Voltage
±20
V
ID
Drain Current-continuous@ TC=25℃
7
A
Ptot
Total Dissipation@TC=25℃
100
W
Tj
Max.
Operating Junction Temperature
150
℃
Tstg
Storage Temperature Range
-55~150 ℃
2SK684
isc website：www.
iscsemi.
com
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isc N-Channel Mosfet Transistor
·ELECTRICAL CHARACTERISTICS (TC=25℃)
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS Drain-Source Breakdown Voltage VGS=0; ID= 10mA
VGS(TH) Gate Threshold Voltage
VDS= 10V; ID= 1mA
RDS(ON) Drain-Source On-stage Resistance VGS= 10V; ID=4A
VSD
Diode Forward Voltage
IF= 7A; VGS=0
IGSS
Gate Source Leakage Current
VGS= ±16V; VDS= 0
IDSS
Zero Gate Voltage Drain Current
VDS=640V; VGS= 0
2SK684
MIN TYP.
MAX UNIT
800
V
2.
0
4.
0
V
1.
0
1.
5
Ω
1.
0
V
±10 uA
250 uA
NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification.
The information contained herein is presented only as a guide for the applications of our products.
ISC products are intended for usage in general electronic equipment.
The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field.
Please contact us if you intend our products to be used in these special applications.
ISC makes no warranty or guarantee regarding the suitability of its products for any particular purpose, nor does IS...
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